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| MBR730-MBR760 Vishay Lite-On Power Semiconductor 7.5A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die construction for transient D Low power loss, high efficiency D High surge capability D High current capability and low forward voltage D For use in low voltage, high frequency inverters, D free wheeling, and polarity protection application Plastic material has UL flammability classification 94V-0 94 9537 protection drop Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type MBR730 MBR735 MBR740 MBR745 MBR750 MBR760 TC=125C Symbol VRRM =VRWM V =VR Value 30 35 40 45 50 60 150 7.5 -65...+150 Unit V V V V V V A A C Peak forward surge current Average forward current Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=7.5A, TC25C IF=7.5A, TC125C IF=7.5A, TC25C IF=7.5A, TC125C TC=25C TC=125C TC=25C TC=125C VR=4V, f=1MHz TL=const. Type MBR730 -MBR745 MBR750 -MBR760 MBR730 -MBR745 MBR750 -MBR760 Symbol Min VF VF VF VF IR IR IR IR CD RthJA dV/dt Typ Max Unit 0.55 V 0.70 V 0.70 V 0.75 V 1.0 mA 15 mA 1.0 mA 50 mA pF K/W V/ms Reverse current Diode capacitance Thermal resistance junction to ambient Voltage rate of change ( Rated VR) Rev. A2, 24-Jun-98 400 3.5 1000 1 (4) MBR730-MBR760 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 10 C D - Diode Capacitance ( pF ) 4000 8 6 1000 4 2 0 0 50 100 150 100 0.1 15316 1.0 10 100 15313 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 50 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 10 I R - Reverse Current ( mA ) IF - Forward Current ( A ) MBR730 - MBR745 Tj = 100C 10 1.0 MBR750 - MBR760 0.1 T = 75C j 1.0 Tj = 25C Pulse Width = 300 s 2% Duty Cycle 0.01 Tj = 25C Resistive or Inductive Load 0.1 0.2 15314 0.4 0.6 0.8 1.0 15317 0.001 0 VF - Forward Voltage ( V ) 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 175 150 125 100 75 50 25 1 15315 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half-Sine-Wave JEDEC method 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 MBR730-MBR760 Vishay Lite-On Power Semiconductor Dimensions in mm 14469 Case: Molded Plastic Polarity: See Diagram Approx. Weight: 2.3 grams Mounting Position: Any Marking: Tupe Number Rev. A2, 24-Jun-98 3 (4) MBR730-MBR760 Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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